By L. C. Kimerling, L. Dal Negro, M. Stolfi (auth.), Nobuyoshi Koshida (eds.)
Recent advancements within the know-how of silicon nanocrystals and silicon nanostructures, the place quantum-size results are very important, are systematically defined together with examples of equipment functions. as a result of the robust quantum confinement influence, the cloth houses are free of the standard oblique- or direct-bandgap regime, and the optical, electric, thermal, and chemical houses of those nanocrystalline and nanostructured semiconductors are enormously replaced from these of bulk silicon. as well as effective noticeable luminescence, quite a few different precious fabric features are brought on in nanocrystalline silicon and periodic silicon nanostructures. a few novel units and purposes, in fields comparable to photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron machine, spin transistor, nonvolatile reminiscence, and ballistic electron emitter), acoustics, and biology, were constructed by means of those quantum-induced features in methods diversified from the normal scaling precept for ULSI.
- Offers the 1st complete remedy of contemporary advances in quantum-sized silicon machine know-how
- Presents systematic and brilliant descriptions from a technological standpoint, supplying a pragmatic viewpoint on approaching silicon gadget suggestions within the post-scaling period
- Shows how silicon nanocrystal expertise is prime to the way forward for silicon electronics, optoelectronics, and photonics
- Reviews optimum recommendations for constructing the subsequent new release of units for microelectronics, photonics, acoustics, and biology
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Extra resources for Device applications of silicon nanocrystals and nanostructures
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05 1997 1999   D and L mean that anodization has been conducted in the dark and under illumination, respectively. 05% was obtained . Operating voltages for EL visible in daylight are rather high, usually greater than 10 V. It is worth noting that blue EL has been demonstrated  using an as-formed PS layer formed from p-type Si, with a gold top contact. PS was thinned by using photochemical etching in HF. The efficiency of this device was very low and much work is needed to reach the same level of efficiency as for red-orange emitting devices.
Adapted from . As already discussed in Sect. 6, the technique of HWA is a new technique that provides very stable PL [2, 3] and EL . It is a very promising low temperature process. 10. Microcavities Making a microcavity by inserting a luminescent PS layer between two reflective media offers three main advantages. First, a significant PL line narrowing is achievable in this way . Second, high luminescence directionality can be achieved [83, 84]. Finally, although not experimentally demonstrated yet, a reduction of the EL response time is potentially possible by using PS in a microcavity  since the PL lifetime may be reduced in this way.